GA200NS61U |
RFQ for GA200NS61U |
![]() |
| Product | Manufacturers | Pack | D/C |
| GA200NS61U | - | SOP | - |
Typical Application |
Features |
| Increased operating efficiencyDirect mounting to heatsinkPerformance optimized for power conversion: UPS, SMPS, WeldingLower EMI, requires less snubbing | Generation 4 IGBT technologyUltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVery low conduction and switching lossesHEXFRED™antiparallel diodes with ultra- soft recoveryIndustry standard packageUL approved |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC=25°C | Continuous Collector Current | 200 | A |
| ICM | Pulsed Collector Current | 400 | |
| ILM | Peak Switching Current‚ | 400 | |
| IFM | Peak Diode Forward Current | 400 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 625 | W |
| PD @ TC=85°C | Maximum Power Dissipation | 325 | |
| TJ | Operating Junction Temperature Range | -40 to +150 | °C |
| TSTG | Storage Temperature Range | -40 to +125 |